Method for fabricating crystalline silicon thin films
US7485560B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Nov 22, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Jul 24, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.