Filling deep features with conductors in semiconductor manufacturing
US7485561B2 · kind B2 · utility
4Cited by
38References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a conductive material in a three dimensional integration structure feature formed on a surface of a wafer is disclosed. The feature is filled with a dispersion containing a plurality of conductive particles and a solvent. Then, the solvent is removed from the feature, leaving the plurality of conductive particles in the feature. These two steps are repeated until the feature is filled up with the conductive particles. Then, the conductive particles are annealed in the feature, thereby forming a dense conductive plug in the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.