Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
US7485570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Jan 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.