Inventor · Yokohama, JP

Kengo Inoue

11Patents
4h-index
22Co-inventors
56Inventor score

Filing activity: Oct 29, 2003 → May 1, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US6949830B2 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Electricity 26 Expired
US8778814B2 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Electricity 15 Active
US7626234B2 Semiconductor device with shallow trench isolation and its manufacture method Electricity 7 Active
US7037803B2 Manufacture of semiconductor device having STI and semiconductor device manufactured Electricity 5 Expired
US8349722B2 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Electricity 4 Active
US7485570B2 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Electricity 4 Active
US7183200B2 Method for fabricating a semiconductor device Electricity 2 Expired
US7211480B2 Semiconductor device with shallow trench isolation and its manufacture method Electricity 1 Expired
US9349600B2 Semiconductor device manufacturing method and semiconductor device Electricity 0 Active
US8352219B2 Numerical structure-analysis calculation system Physics 0 Active
US10814886B2 System of optimizing activation degree of occupant of vehicle Performing Operations; Transporting 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.