Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same
US7485585B2 · kind B2 · utility
1Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Feb 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.