Patent · US Active

Integrated capacitor structure

US7485945B2 · kind B2 · utility

0Cited by

6References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Baumgartner · Munich, DE
Philipp Riess · Munich, DE
Thomas Benetik · Munich, DE
Dieter Draxelmayr · Villach, AT

Key dates

Filing date	Oct 3, 2006
Grant date	Feb 3, 2009
Priority date	—
Expiry date	Nov 21, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component includes an integrated capacitor structure embodied at least partly in an electrically conductive plane and which is patterned such that a multiplicity of strip elements are present. A first group of strip elements constitutes a first electrode of the capacitor structure and a second group of strip elements constitutes a second electrode of the capacitor structure. The first strip elements together with the second strip elements being at least partly interlinked in one another, and at least one strip element may have a non-constant width along its length.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.