Semiconductor device
US7485949B2 · kind B2 · utility
1Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2007 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Aug 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The device includes a substrate, a first porous SiCOH dielectric layer, a second porous SiCOH dielectric layer, and an oxide layer. The first porous SiCOH dielectric layer overlies the substrate. The second porous SiCOH dielectric layer overlies the first porous SiCOH dielectric layer. The oxide layer overlies the second porous SiCOH dielectric layer. The atomic percentage of carbon in the second porous SiCOH dielectric layer is between 16% and 22% of that in the first porous SiCOH dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.