Low power voltage reference
US7486129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Mar 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/245
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.