Phase-changeable memory device and method of programming the same
US7486536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Dec 26, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a phase-changeable memory device and method of programming the same. The phase-changeable memory device includes memory cells each having multiple states, and a program pulse generator providing current pulses to the memory cells. The program pulse generator initializes a memory cell to a reset or set state by applying a first pulse thereto and thereafter provides a second pulse to program the memory cell to one of the multiple states. According to the invention, as a memory cell is programmed after being initialized to a reset or set state, it is possible to correctly program the memory cell without influence from the previous state of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.