Methods for forming layers within a MEMS device using liftoff processes to achieve a tapered edge
US7486867B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S359/90
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.