Patent · US Expired

Device and method for improving interface adhesion in thin film structures

US7488661B2 · kind B2 · utility

0Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 7, 2006
Grant dateFeb 10, 2009
Priority date
Expiry dateMay 1, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/01
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A device and method for improving adhesion for thin film layers includes applying a diblock copolymer on a surface where adhesion to subsequent layers is needed and curing the diblock copolymer. Pores are formed in the diblock copolymer by treating the diblock copolymer with a solvent. The surface is etched through the pores of the diblock copolymer to form adhesion promoting features. The diblock copolymer is removed, and a layer is deposited on the surface wherein the adhesion promoting features are employed to promote adhesion between the layer and the surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.