Semiconductor device and method of manufacturing the same
US7489230B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 2006 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Mar 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first insulating layer, which is formed on a semiconductor substrate (not shown), and formed with a concave portion, and an electric fuse which has a conductive member, a first terminal provided on one end and a second terminal provided on the other end of the conductive member, and which is provided on the first insulating layer. The first insulating layer is embedded with the conductive member. The conductive member has a flowing-out region in which a material forming the conductive member flows out to the outside of the concave portion, and is cut at a location different from the flowing-out region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.