Method of forming a device by removing a conductive layer of a wafer
US7491566B2 · kind B2 · utility
2Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jul 15, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0315
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of forming a MEMS device provides a wafer having a base, a first conductive layer, a second conductive layer, and an intermediate conductive layer. After it provides the wafer, the method removes at least a portion of the intermediate conductive layer to form a cavity between the first and second conductive layers. At least a portion of the first conductive layer is movable relative to the base to form a diaphragm, while the second conductive layer is substantially immovable relative to the base. After it forms the cavity, the method seals the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.