Method for fabricating an image sensor mounted by mass reflow
US7491572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | May 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48227
Abstract
A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.