ESD protection device in high voltage and manufacturing method for the same
US7491584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
Electrostatic discharge (ESD) protection device in high voltage and the relevant manufacturing method is disclosed. The mentioned ESD protection device is disposed to bridge a ground and an input connected with an inner circuit to be protected. In which, the ESD protection device for high voltage comprises at least one PNP transistor and at least one diode connected in parallel, and an ESD discharging path is formed thereby. The PNP transistor is formed with an adjacent heavily doped P-type semiconductor zone (P+), lightly doped N-type semiconductor zone (N−), and a P-type semiconductor substrate. The diode is formed with an adjacent lightly doped N-type semiconductor zone and a light doped P-type semiconductor zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.