Tao Cheng
50Patents
10h-index
71Co-inventors
81Inventor score
Filing activity: Sep 5, 1995 → May 19, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5631793A | Capacitor-couple electrostatic discharge protection circuit | Electricity | 79 | Expired |
| US6576934B2 | Embedded SCR protection device for output and input pad | Electricity | 21 | Expired |
| US6492208B1 | Embedded SCR protection device for output and input pad | Electricity | 19 | Expired |
| US7897995B2 | Lateral bipolar junction transistor with reduced base resistance | Electricity | 18 | Active |
| US6940108B2 | Slot design for metal interconnects | Electricity | 16 | Expired |
| US7667302B1 | Integrated circuit chip with seal ring structure | Electricity | 16 | Active |
| US7671469B2 | SiGe device with SiGe-embedded dummy pattern for alleviating micro-loading effect | Electricity | 13 | Active |
| US7821038B2 | Power and ground routing of integrated circuit devices with improved IR drop and chip performance | Electricity | 10 | Active |
| US9761534B2 | Semiconductor package, semiconductor device using the same and manufacturing method thereof | Electricity | 10 | Active |
| US8242586B2 | Integrated circuit chip with seal ring structure | Electricity | 10 | Active |
| US6611028B2 | Dynamic substrate-coupled electrostatic discharging protection circuit | Electricity | 8 | Expired |
| US8138616B2 | Bond pad structure | Electricity | 8 | Active |
| US7532446B2 | Protection circuit for electro static discharge | Electricity | 7 | Expired |
| US6465308B1 | Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant | Electricity | 7 | Expired |
| US6479872B1 | Dynamic substrate-coupled electrostatic discharging protection circuit | Electricity | 6 | Expired |
| USD614537S1 | All terrain vehicle | General | 5 | Expired |
| US9597752B2 | Composite solder ball, semiconductor package using the same, semiconductor device using the same and manufacturing method thereof | Electricity | 5 | Active |
| US6531382B1 | Use of a capping layer to reduce particle evolution during sputter pre-clean procedures | Electricity | 5 | Expired |
| US9908203B2 | Composite solder ball, semiconductor package using the same, semiconductor device using the same and manufacturing method thereof | Electricity | 4 | Active |
| US7894170B2 | ESD protection device | Electricity | 4 | Expired |
| US6717220B2 | Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant | Electricity | 3 | Expired |
| US7491584B2 | ESD protection device in high voltage and manufacturing method for the same | Electricity | 3 | Active |
| US7203050B2 | NPN Darlington ESD protection circuit | Electricity | 3 | Expired |
| US8860544B2 | Integrated inductor | Electricity | 2 | Active |
| US9905515B2 | Integrated circuit stress releasing structure | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.