Semiconductor device with leakage implant and method of fabrication
US7491586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.