Plasma processing apparatus
US7491649B2 · kind B2 · utility
2Cited by
28References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Sep 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.