Method of collector formation in BiCMOS technology
US7491985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Nov 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath the shallow trench isolation region on the subcollector of the device. Specifically, the HBT of the present invention includes a substrate including at least a subcollector; a buried refractory metal silicide layer located on the subcollector; and a shallow trench isolation region located on a surface of the buried refractory metal silicide layer. The present invention also provides a method of fabricating such a HBT. The method includes forming a buried refractory metal silicide underneath the shallow trench isolation region on the subcollector of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.