Transistors with increased mobility in the channel zone and method of fabrication
US7491988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A diffusion barrier layer having a second dopant is formed on the semiconductor substrate to suppress outdiffusion of the first dopant. Next, a semiconductor layer having substantially low dopant concentration relative to the first layer is epitaxially grown on the diffusion barrier layer. The semiconductor layer defines a channel in the semiconductor transistor structure. The low dopant concentration in the semiconductor layer increases the mobility of the carriers in the channel of the semiconductor transistor structure. A gate electrode and a gate dielectric are formed on the semiconductor layer with the low dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.