Superjunction power semiconductor device
US7492003B2 · kind B2 · utility
14Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2007 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Feb 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A superjunction power semiconductor device which includes spaced drift regions each extending from the bottom of a respective gate trench to the substrate of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.