Siliconix Technology C. V.
22Patents
18Active
22Granted
44Portfolio score
Filing activity: Feb 25, 2004 → Mar 20, 2015 · 13 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8368165B2 | Silicon carbide Schottky diode | Electricity | 20 | Active |
| US7834376B2 | Power semiconductor switch | Electricity | 15 | Expired |
| US7767500B2 | Superjunction device with improved ruggedness | Electricity | 14 | Active |
| US7492003B2 | Superjunction power semiconductor device | Electricity | 14 | Active |
| US7292445B2 | Active integrated rectifier regulator | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7394158B2 | Solderable top metal for SiC device | Electricity | 13 | Expired |
| US7858456B2 | Merged P-i-N Schottky structure | Electricity | 10 | Expired |
| US7659588B2 | Termination for a superjunction device | Electricity | 8 | Active |
| US9478441B1 | Method for forming a superjunction device with improved ruggedness | Electricity | 7 | Active |
| US8633561B2 | Termination for a superjunction device | Electricity | 7 | Active |
| US7812441B2 | Schottky diode with improved surge capability | Electricity | 6 | Active |
| US7749877B2 | Process for forming Schottky rectifier with PtNi silicide Schottky barrier | Electricity | 5 | Active |
| US9472403B2 | Power semiconductor switch with plurality of trenches | Electricity | 4 | Active |
| US9496421B2 | Solderable top metal for silicon carbide semiconductor devices | Electricity | 2 | Active |
| US9627553B2 | Silicon carbide schottky diode | Electricity | 1 | Active |
| US8895424B2 | Process for forming schottky rectifier with PtNi silicide schottky barrier | Electricity | 1 | Active |
| US9935193B2 | MOSFET termination trench | Electricity | 0 | Active |
| US7808029B2 | Mask structure for manufacture of trench type semiconductor device | Electricity | 0 | Active |
| US8274128B2 | Semiconductor device with buffer layer | Electricity | 0 | Active |
| US8685849B2 | Semiconductor device with buffer layer | Electricity | 0 | Active |
| US8921969B2 | Chip-scale Schottky device | Electricity | 0 | Active |
| US9865749B1 | Merged P-i-N Schottky structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.