Internal voltage generator of semiconductor device
US7492646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2007 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Mar 14, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F1/465
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An internal voltage generator of a semiconductor memory device is capable of changing driving abilities between standby and active modes, to respond faster in the active mode and prevent a leakage current in the standby mode. The internal voltage generator of a semiconductor memory device comprises a driving controller for generating drive control signals having information about standby and active modes, a first voltage generator enabled by the drive control signals for comparing an internal voltage with a reference voltage in the standby and active modes, a first driver for generating the internal voltage according to a comparison performed by the first voltage generator, a second voltage generator enabled by the drive control signal for comparing the internal voltage with the reference voltage in the active mode, and a second driver for generating the internal voltage according to a comparison performed by the second voltage generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.