Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
US7494546B1 · kind B1 · utility
2Cited by
20References
7Claims
0Family size
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Key dates
| Filing date | Jul 16, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jul 16, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical properties. These films and their properties could be used for protecting electronic devices under space radiation applications such as solar cell operating in space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.