Evan Jones
9Patents
3h-index
20Co-inventors
53Inventor score
Filing activity: Jul 16, 2007 → Oct 22, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9257647B2 | Phase change material switch and method of making the same | Electricity | 69 | Active |
| US10971612B2 | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability | Electricity | 12 | Active |
| US10923585B2 | High electron mobility transistors having improved contact spacing and/or improved contact vias | Electricity | 4 | Active |
| US7494546B1 | Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices | Emerging Cross-Sectional Technologies | 2 | Active |
| US11616136B2 | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability | Electricity | 0 | Active |
| US12218202B2 | Semiconductor device incorporating a substrate recess | Electricity | 0 | Active |
| US11075271B2 | Stepped field plates with proximity to conduction channel and related fabrication methods | Electricity | 0 | Active |
| US11257940B2 | Group III HEMT and capacitor that share structural features | Electricity | 0 | Active |
| US12113114B2 | Transistor with ohmic contacts | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.