Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
US7494724B2 · kind B2 · utility
2Cited by
13References
21Claims
0Family size
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Key dates
| Filing date | Jul 3, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jul 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle an be interrupted when the current reaches a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.