Method and systems for utilizing simplified resist process models to perform optical and process corrections
US7494752B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Mar 22, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system for utilizing a simplified resist process model to perform optical and process corrections. More specifically, the present invention provides a fast and easy post exposure bake (PEB) effects calculation which can be used in connection with OPC. The model can be used to increase OPC modeling accuracy, by taking PEB effects into consideration, without incurring a large overhead increase due to PEB calculation cost. The method includes providing an image, calculating initial acid concentration and adding acid concentration contours to the image, calculating deprotection concentration and adding deprotection concentration contours to the image, determining latent image contour without diffusion, moving the latent image contour in a direction of lower deprotection concentration to provide the final latent image, performing OPC on the chemically amplified resist using edge movement based on the final latent image, and repeating the process to obtain convergence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.