Top contact alignment in semiconductor devices

US7494825B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Brian R. Butcher · Gilbert, US
• Kerry Joseph Nagel · Scottsdale, US
• Kenneth Smith · Chandler, US

Key dates

• Filing date: Jan 3, 2007
• Grant date: Feb 24, 2009
• Expiry date: Jan 3, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/975

Abstract

According to an example embodiment, a semiconductor device includes a lower electrode (316) disposed on an oxide layer (302), an upper electrode (320) disposed on the lower electrode, a dielectric pattern (322) disposed on the oxide layer and surrounding the upper electrode, the upper electrode protruding above an upper surface of the dielectric pattern, and a contact pattern (328) that is contiguous with the upper electrode and the dielectric pattern.