Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material
US7494831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2005 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Aug 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to the production of a stacked structure of planes of islands of a first semiconducting material encapsulated in a second semiconducting material on a substrate, comprising alternate deposition of planes of islands of a first semiconducting material and encapsulation layers of a second semiconducting material, the planes of islands of the first semiconducting material being made at an optimum growth temperature and at an optimum precursor gas partial pressure to result in a stacked structure for which the optical properties enable production of optoelectronic components to optically interconnect integrated circuits. The stacked structure is made on a plane of islands of a third semiconducting material called the sacrificial plane encapsulated in a fourth semiconducting material, the islands of the sacrificial plane being made under growth conditions that can result in high densities of small islands, in other words at a temperature below the optimum growth temperature and/or at a precursor gas partial pressure greater than the optimum partial pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.