Patent · US Active

Design techniques for stacking identical memory dies

US7494846B2 · kind B2 · utility

27Cited by
7References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 9, 2007
Grant dateFeb 24, 2009
Priority date
Expiry dateJun 6, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes a first semiconductor die and a second semiconductor die identical to the first semiconductor die. The first semiconductor die includes a first identification circuit; and a first plurality of input/output (I/O) pads on the surface of the first semiconductor die. The second semiconductor die includes a second identification circuit, wherein the first and the second identification circuits are programmed differently from each other; and a second plurality of I/O pads on the surface of the second semiconductor die. Each of the first plurality of I/O pads is vertically aligned to and connected to one of the respective second plurality of I/O pads. The second semiconductor die is vertically aligned to and bonded on the first semiconductor die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.