Device and method using isotopically enriched silicon
US7494888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jan 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.