Aluminum metal line of a semiconductor device and method of fabricating the same
US7494921B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Apr 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an aluminum line of a semiconductor device where first A metal thin layer, a first aluminum layer, and a first B metal thin layer are sequentially applied on an interlayer insulating layer. A photolithography process is performed to form a metal line pattern, and etching is performed thereon. An intermetallic dielectric layer is applied on the metal line pattern. The first B metal thin layer is removed by a chemical mechanical planarization process to form a first stage metal line. A second aluminum layer and a second metal thin layer are sequentially applied. Photoresist is applied, a photolithography process is performed to form a metal line pattern, and etching is performed to form a second stage metal line. An intermetallic dielectric layer is applied on the second stage metal line. A chemical mechanical planarization process is performed on the second intermetallic dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.