Using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector
US7495230B2 · kind B2 · utility
1Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Aug 16, 2005 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Aug 11, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/1719
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated plasmon detector includes a top layer of material adapted to generate a plasmon when excited by a beam of light incident onto a surface of the top layer, an interface layer joined to the top layer opposite from the surface of the top layer and adapted to slow polarons emitted by the plasmon to thermal electrons, and a collector layer joined to the interface layer opposite from the top layer and adapted to collect the thermal electrons from the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.