Semiconductor device having photo sensor element and amplifier circuit
US7495272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
Abstract
The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.