Method for producing vertical bipolar transistors and integrated circuit

US7495312B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Patrick Algotsson · Stockholm, SE
• Hans Norstrom · Solna, SE
• Karin Andersson · Stockholm, SE

Key dates

• Filing date: Sep 30, 2005
• Grant date: Feb 24, 2009
• Expiry date: Nov 20, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter regions above the buried collector region. The lateral extensions and locations of the base and emitter regions and of the buried collector region are, for each of the vertical bipolar transistors, selected to create an overlap between the base and emitter regions, and the buried collector region, as seen from above, wherein at least some of the overlaps are selected to be different.