Germanium substrate-type materials and approach therefor

US7495313B2 · kind B2 · utility

Assignees

• Board of Trustees of the Leland Stanford Junior University · US
• Canon Kabushiki Kaisha · JP

Inventors

• Ammar Munir Nayfeh · Stanford, US
• Chi On Chui · Hsinchu, TW
• Krishna C. Saraswat · Saratoga, US
• Takao Yonehara · Atsugi, JP

Key dates

• Filing date: Jul 22, 2005
• Grant date: Feb 24, 2009
• Expiry date: Nov 7, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/685
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.