Connection structure and method for fabricating the same
US7495339B2 · kind B2 · utility
0Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Oct 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.