Resistive memory devices including selected reference memory cells
US7495984B2 · kind B2 · utility
38Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jul 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Resistance based Random Access Memory (ReRAM) can include a current reference circuit including at least three ReRAM reference cells coupled in parallel with one another and configured to provide a reference current to respective ReRAM sense amplifier circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.