Laser reflowing of phase changeable memory element to close a void therein
US7498064B2 · kind B2 · utility
6Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jan 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in the contact hole. The void is at least partially closed by impinging a laser beam on the phase changeable material film sufficiently to reflow the phase changeable material film in the void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.