Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process
US7498124B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Mar 15, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.