Method and apparatus for forming metal film
US7498261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2005 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Nov 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.