Sensing memory device
US7498631B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Sep 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A sensing memory device disposed on a substrate is provided, which includes a first conductive layer, a second conductive layer and a charge trapping layer. The second conductive layer covers the first conductive layer. The charge trapping layer is disposed between the first conductive layer and the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.