Inventor · Tainan, TW

Cha-Hsin Lin

23Patents
4h-index
17Co-inventors
56Inventor score

Filing activity: Dec 22, 2004 → Jun 25, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US7700988B2 Metal-insulator-metal capacitor Electricity 9 Active
US9041163B2 Semiconductor structure and manufacturing method thereof Electricity 4 Active
US7663177B2 Non-volatile memory device and fabricating method thereof Electricity 4 Expired
US8445995B2 Semiconductor structure with conductive plug in an oxide layer Electricity 4 Active
US8124954B2 Conductive bridging random access memory device and method of manufacturing the same Electricity 3 Active
US7683374B2 Silicon based photodetector Emerging Cross-Sectional Technologies 3 Active
US7507653B2 Method of fabricating metal compound dots dielectric piece Electricity 2 Active
US9257322B2 Method for manufacturing through substrate via (TSV), structure and control method of TSV capacitance Electricity 2 Active
US7696509B2 Solid state electrolyte memory device and method of fabricating the same Electricity 1 Active
US8309402B2 Method of fabricating oxide material layer with openings attached to device layers Electricity 1 Active
US7347228B2 Method of making semiconductor devices Electricity 1 Expired
US9093312B2 Semiconductor device and manufacturing method thereof Electricity 1 Active
US7880213B2 Bottom electrode of metal-insulator-metal capacitor Electricity 1 Active
US9368475B2 Semiconductor device and manufacturing method thereof Electricity 1 Active
US7033899B2 Method of making semiconductor devices Electricity 1 Expired
US7724499B2 Electrolyte transistor Electricity 1 Active
US7498631B2 Sensing memory device Electricity 0 Active
US7521305B2 Method for fabricating semiconductor device Electricity 0 Expired
US7408170B2 Ultraviolet detector Physics 0 Expired
US7589373B2 Semiconductor device Electricity 0 Active
US7371628B2 Method for fabricating semiconductor device Electricity 0 Expired
US9257337B2 Semiconductor structure and manufacturing method thereof Electricity 0 Active
US9257338B2 TSV substrate structure and the stacked assembly thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.