Semiconductor device and method for manufacturing the same
US7498643B2 · kind B2 · utility
4Cited by
1References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 13, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jun 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.