Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same
US7499249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jul 8, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49021
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic detecting element capable of maintaining a large ΔRA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element X in the latter case is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ΔRA, compared with a case where only the CoMnX alloy is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.