Method of programming a nonvolatile memory cell and related memory array
US7499336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2007 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Aug 10, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method for programming stored bits in floating gates of a flash memory cell or selected flash memory cells of a flash memory array is utilized for applying SSI injection on said flash memory cell or said selected flash memory cells of a flash memory array is disclosed. Constant charges at the drain regions of said flash memory cell or said selected flash memory cells of the flash memory array is implemented with a capacitor and a related switch for suppressing variant injected-charges-related properties in applying the SSI injection. A constant biasing current, which may be implemented with a constant current source or a current mirror equipped with a constant current source, is applied on source regions of said flash memory cell or said selected flash memory cells of the flash memory array for enhancing the suppression of said variant biasing properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.