Ming-Hung Chou
41Patents
11h-index
37Co-inventors
75Inventor score
Filing activity: Sep 10, 1997 → Jun 9, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8072805B2 | Method and system of finding a read voltage for a flash memory | Physics | 80 | Active |
| US6580135B2 | Silicon nitride read only memory structure and method of programming and erasure | Electricity | 75 | Expired |
| US6643170B2 | Method for operating a multi-level memory cell | Electricity | 56 | Expired |
| US6760257B2 | Programming a flash memory cell | Physics | 36 | Expired |
| US5912845A | Method and circuit for substrate current induced hot e.sup.- injection (SCIHE) approach for V.sub.T convergence at low V.sub.CC voltage | Physics | 33 | Expired |
| US8429497B2 | Method and system of dynamic data storage for error correction in a memory device | Physics | 29 | Active |
| US6455896B1 | Protection circuit for a memory array | Electricity | 17 | Expired |
| US6031766A | Method and circuit for substrate current induced hot e-injection (SCIHE) approach for V.sub.T convergence at low V.sub.cc voltage | Physics | 14 | Expired |
| US7848152B1 | Method and system for adaptively finding reference voltages for reading data from a MLC flash memory | Physics | 13 | Active |
| US6751127B1 | Systems and methods for refreshing non-volatile memory | Physics | 13 | Expired |
| US8130544B2 | Method of reducing bit error rate for a flash memory | Physics | 12 | Active |
| US6639839B1 | Sensing method for EEPROM refresh scheme | Physics | 11 | Expired |
| US6633500B1 | Systems and methods for refreshing a non-volatile memory using a token | Physics | 7 | Expired |
| US6324092A | Random access memory cell | Physics | 7 | Expired |
| US8355285B2 | Method and system for adaptively finding reference voltages for reading data from a MLC flash memory | Physics | 7 | Active |
| US6545911B2 | Flash memory erase method | Physics | 6 | Expired |
| US8503233B2 | Method of twice programming a non-volatile flash memory with a sequence | Physics | 6 | Active |
| US7439133B2 | Memory structure and method of manufacturing a memory array | Physics | 5 | Active |
| US7499336B2 | Method of programming a nonvolatile memory cell and related memory array | Physics | 5 | Active |
| US7116606B2 | Method and circuit of plasma damage protection | Electricity | 5 | Expired |
| US7196369B2 | Plasma damage protection circuit for a semiconductor device | Electricity | 4 | Expired |
| US8074013B2 | Uniform coding system for a flash memory | Physics | 4 | Active |
| US6787860B1 | Apparatus and method for inhibiting dummy cell over erase | Electricity | 3 | Expired |
| US8867272B2 | Method of accessing a non-volatile memory | Physics | 3 | Active |
| US6788602B2 | Memory device and operation thereof | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.