Advanced CMOS using super steep retrograde wells

US7501324B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Jeffrey A. Babcock · Neufahrn, DE
• Angelo Pinto · Augusta, IT
• Scott Balster · Dallas, US
• Alfred Haeusler · Freising, DE
• Gregory E. Howard · Dallas, US

Key dates

• Filing date: Apr 27, 2006
• Grant date: Mar 10, 2009
• Expiry date: Apr 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).