Nonvolatile semiconductor memory device and phase change memory device
US7502252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Oct 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
For the purpose of providing a phase change memory device advantageous in layout and operation control by obtaining sufficient write current for high integrated phase change memory devices, the nonvolatile semiconductor memory device of the invention in which word lines and bit lines are arranged in a matrix-shape comprises a select transistor formed at each cross point of the word lines and the bit lines, and a plurality of memory elements commonly connected to the select transistor at one end and connected to a different element select line at an other end and which is capable of writing and reading data. Write and read operations for the selected memory element are controlled by supplying a predetermined current through the select transistor and through the element select line connected to the selected memory element, and the element select lines are arranged in parallel with the bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.