Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 · kind B2 · utility
10Cited by
59References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2004 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Dec 12, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.